Wednesday, 10 December 2008

Scientists Make First Paper-Based Transistor

A team in Portugal have produced the world's first field-effect transistor based on paper. The paper layer acts as an "interstrate", with the actual FET components being fabricated onto both sides: so the paper holds the transistor together and acts as an insulator. 

In tests the paper transistor performed better than amorphous silicon transistors and even approaches the performance of state-of-the-art oxide thin-film transistors.


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